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AUIRL3705Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S max. ID (Silicon Limited) ID (Package Limited).

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📁 Similar Datasheet

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AUIRL3705Z Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .