Datasheet4U Logo Datasheet4U.com

AUIRL3705ZS - Power MOSFET

Download the AUIRL3705ZS datasheet PDF. This datasheet also covers the AUIRL3705Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S max. ID (Silicon Limited) ID (Package Limited).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRL3705Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRL3705ZS Power MOSFET Infineon
AUIRL3705Z Power MOSFET Infineon
AUIRL3705ZL Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon
AUIRL1404S Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRL3705Z Power MOSFET
AUIRL3705ZL Power MOSFET
AUIRL1404L Power MOSFET
AUIRL1404S Power MOSFET
AUIRL1404Z Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .