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AUIRL7732S2TR1 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97635A AUTOMOTIVE GRADE • Logic Level • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 5.0mΩ max. 6.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AUIRL7732S2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

The DirectFET ® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

More Datasheets from International Rectifier (now Infineon)

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