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AUIRL7732S2TR1 - Power MOSFET

Download the AUIRL7732S2TR1 datasheet PDF. This datasheet also covers the AUIRL7732S2TR variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRL7732S2TR-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRL7732S2TR Power MOSFET Infineon
AUIRL7736M2TR Power MOSFET Infineon
AUIRL7766M2TR Power MOSFET Infineon
AUIRL1404L Power MOSFET Infineon
AUIRL1404S Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRL7732S2TR Power MOSFET
AUIRL7736M2TR Power MOSFET
AUIRL7736M2TR1 Power MOSFET
AUIRL7766M2TR Power MOSFET
AUIRL7766M2TR1 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 97635A AUTOMOTIVE GRADE • Logic Level • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 5.0mΩ max. 6.