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AUIRLR014N - HEXFET Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • g TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Fig 13a. Basic Gate Charge Waveform www. irf. com Current Regulator Same Type as D. U. T. 50K 12V .2F .3F D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRLR014N Peak Diode Recovery dv/dt Test Circuit D. U. T + ‚ - + Circuit Layout Considerations .
  •  Low Stray Inductance.

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AUTOMOTIVEGRADE PD - 97740 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified* G Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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