AUIRLR024N Datasheet | International Rectifier

PD- 96348 AUTOMOTIVE GRADE Features l l l l l l l l l l AUIRLR024N AUIRLU024N HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance Logic-Level Gate Drive Dynamic d V/d T Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified - V(BR)DSS 55V 0.065Ω 17A RDS(on) max. Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S G D S D-Pak AUIRLR024N I-Pak AUIRLU024N Gate Drain Source...