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AUIRLR024Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Logic Level.
  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRLR024Z Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

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AUIRLR024N Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 97753 AUIRLR024Z AUIRLU024Z Features ● Logic Level ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * G HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. S ID 55V 46m 58m 16A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .