AUIRLR120N Datasheet | International Rectifier

- 97624 AUTOMOTIVE GRADE HEXFET® Power MOSFET - - - - - - - - - - Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic d V/d T Rating 175ºC Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro HS pliant Automotive Qualified- V(BR)DSS RDS(on) max. ID 100V 0.185Ω 10A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D-Pak AUIRLR120N Gate Drain Source...