AUIRLR3114Z Datasheet | International Rectifier

AUTOMOTIVE GRADE - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature D VDSS RDS(on) max @ 10V 40V 4.9mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level G max @ 4.5V ID (Silicon Limited) 6.5mΩ k130A l Lead-Free, Ro HS pliant l Automotive Qualified - S ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak AUIRLR3114Z I-Pak AUIRLU3114Z Gate Drain Source...