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AUIRLR3114Z - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature D VDSS RDS(on) max @ 10V 40V 4.9mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level G max @ 4.5V ID (Silicon Limited) 6.5mΩ k130A l Lead-Free, RoHS Compliant l Automotive Qualified.
  • S ID (Package Limited) 42A.

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AUTOMOTIVE GRADE PD - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature D VDSS RDS(on) max @ 10V 40V 4.9mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level G max @ 4.5V ID (Silicon Limited) 6.5mΩ k130A l Lead-Free, RoHS Compliant l Automotive Qualified * S ID (Package Limited) 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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