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AUIRLS3034-7P - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 1.0m max. 1.4m cG ID (Silicon Limited) 380A S ID (Package Limited) 240A.

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AUTOMOTIVE GRADE PD - 97717A AUIRLS3034-7P Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 1.0m max. 1.4m cG ID (Silicon Limited) 380A S ID (Package Limited) 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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