BG25XF120K Datasheet | International Rectifier

Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance • Low EMI, Requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Low Junction to Case Thermal Resistance • UL Approved E78996 ECONO2 6PACK Absolute Maximum Ratings Parameter VCES IC @ Tc=25°C IC @ Tc=80°C ICM ILM IF @ Tc=25°C IF @ Tc=80°C IFM VGE PD @ Tc=25°C PD @ Tc=80°C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Pulsed Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT and Diode) Maximum Power Dissipation (IGBT and Diode) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage Bulletin PD - 94569 rev.B 08/03 GB25XF120K VCES = 1200V IC = 25A @ TC=80°C tsc > 10µs @ TJ=150°C VCE(on) typ. = 2.35V Max. 1200 40 25 80 80 40 25 80 ±20 198 111 150 -40 to +125 AC 2500 (MIN) Units V A V W °C V Thermal and Mechanical Characteristics RθJC (IGBT) RθJC (Diode) RθCS (Module) Parameter Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight Min Typical Maximum Units - - °C/W - - 1,00 - 0.05 - 2.7 - 3.3 N- m - 170 - g .irf. GB25XF120K Bulletin PD - 94569 rev.B...