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CPU165MU - IGBT SIP MODULE Ultra-Fast IGBT

General Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM.

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Other Datasheets by International Rectifier (now Infineon)

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CPU165MF IGBT SIP MODULE Fast IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Previous Datasheet Index Next Data Sheet PD - 5.029 CPU165MU IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve Ultra-Fast IGBT 1,2 4 5 Q1 D1 6,7 Product Summary Output Current in a Typical 20 kHz Motor Drive 10 ARMS with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) 9 Q2 D2 11,12 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules.