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F3710S Datasheet Irf3710s

Manufacturer: International Rectifier (now Infineon)

Overview: .DataSheet.co.kr PD -91310C IRF3710S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3710S) Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4.

Key Features

  • Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

F3710S Distributor