F7313 Datasheet | International Rectifier

- 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRF7313Pb F HEXFET® Power MOSFET S1 G1 D1 D1 VDSS = 30V S2 D2 G2 5 D2 RDS(on) = 0.029Ω Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8...