Datasheet Summary
- 91650A
HEXFET® Power MOSFET l l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Gate Charge Device Low Drain to Case Capacitance Low Internal Inductance
VDSS = 500V RDS(on) = 0.08Ω
ID = 57A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of...