Datasheet Summary
PD- 91651C
HEXFET® Power MOSFET l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance
VDSS = 100V RDS(on) = 0.0065W
ID = 180A
Description
Fifth Generation, high current density HEXFETS are paralled into a pact, high power module providing the best bination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all mercial
- industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and...