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FB180SA10 - Power MOSFET

General Description

Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.

Key Features

  • IR.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
FB11N50A IRFB11N50A

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.0065W G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.