FR18N15D Datasheet | International Rectifier

PD- 93815A SMPS MOSFET Applications l High frequency DC-DC converters IRFR18N15D IRFU18N15D HEXFET® Power MOSFET VDSS 150V RDS(on) max 0.125Ω 18A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak IRFR18N15D I-Pak IRFU18N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 18 13 72 110 0.71 ± 30 3.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Typical SMPS Topologies l Tele 48V input DC-DC Active Clamp Reset Forward Converter .. Notes  through † are on page 10 .irf. 2/23/00 IRFR18N15D/IRFU18N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 - - - - - - 3.0 - - - - - - - - -...