Part G4BC20UD
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 270.84 KB
International Rectifier
G4BC20UD

Overview

  • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
  • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
  • Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-cha nn el Benefits
  • Generation -4 IGBTs offer highest efficiencies available
  • IGBTs optimized for specific application conditions
  • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing
  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB