Datasheet Summary
PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 .. kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220AB package
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A n-cha nn el
Benefits
- Generation -4 IGBTs offer highest efficiencies available
- IGBTs optimized for specific...