Datasheet Summary
PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-220AB package
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A n-cha nn el
Benefits
- Generation -4 IGBT's offer highest efficiencies available
- IGBTs optimized for specific application conditions
-...