G4BC40F - IRG4BC40F

Datasheet Summary

Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

International Rectifier

📥 Download Datasheet

Datasheet Details

Part number	G4BC40F
Manufacturer	International Rectifier
File Size	165.04 KB
Description	IRG4BC40F
Datasheet	G4BC40F Datasheet
Additional preview pages of the G4BC40F datasheet.

📁 Similar Datasheet

G4B - Standard Sinterglass Diode (Vishay)

Other Datasheets by International Rectifier

G4BC40S - IRG4BC40S
G4BC40U - IRG4BC40U
G4BC20F - IRG4BC20F
G4BC20FD - IRG4BC20FD
G4BC20KD - IRG4BC20KD
G4BC20U - IRG4BC20U
G4BC20UD - INSULATED GATE BIPOLAR TRANSISTOR
G4BC30FD - IRG4BC30FD

Full PDF Text Transcription

Click to expand full text

PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

Published: Oct 2, 2014 |