Download G4BH20K-L Datasheet PDF
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Datasheet Summary

PD -93961 IRG4BH20K-L INSULATED GATE BIPOLAR TRANSISTOR Features - High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V - bines low conduction losses with high switching speed - Latest generation design provides tighter parameter distribution and higher efficiency than previous generations - Industry standard TO-262 package Benefits - As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT - Latest generation 4 IGBT's offer highest power density motor controls possible C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 1200V...