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G4PC30F Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR.

G4PC30F datasheet preview

Datasheet Details

Part number	G4PC30F
Manufacturer	International Rectifier (now Infineon)
File Size	185.02 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	G4PC30F_InternationalRectifier.pdf

Key Features

www. DataSheet4U. com C Fast Speed IGBT.
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-247AC package VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specifie.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
G4PC30KD	IRG4PC30KD
G4PC30S	IRG4PC30S
G4PC30U	IRG4PC30U
G4PC40FD	IRG4PC40FD
G4PC40K	IRG4PC40K
G4PC40U	IRG4PC40U
G4PC40UD	IRG4PC40UD
G4PC50F	IRG4PC50F
G4PC50K	IRG4PC50K
G4PC50U	IRG4PC50U

G4PC30F Distributor