Datasheet Summary
PD 91459B
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
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Fast Speed IGBT
- Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A n-channel
Benefits
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC...