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PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies • 50% reduction of Eoff parameter
G
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
G4PF50WD Datasheet
