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G4PH50KD - IRG4PH50KD

Key Features

  • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PH50UD IRG4PH50UD
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G4PH40UD2-E IRG4PH40UD2-E
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr PD- 91575B IRG4PH50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.