Datasheet Summary
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Maximum junction temperature 175 °C
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) temperature co-efficient
- Tight parameter distribution
- Lead -Free
Benefits
- High efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
Applications
- U.P.S
- Welding
- Solar inverter
- Induction heating
C
G E n-channel
PD
- 96233A
IRG7PH42UPbF IRG7PH42U-EP
VCES = 1200V IC = 60A, TC =...