GB15RF120K
Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design
VCES = 1200V IC = 15A, TC=80°C tsc > 10µs, TJ=150°C
ECONO2 PIM
VCE(on) typ. = 2.55V
Benefits
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI, Requires Less Snubbing
- Direct Mounting to Heatsink
- PCB Solderable Terminals
- Low Junction to Case Thermal Resistance
- UL Listed
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Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter Symbol
VCES VGES IC ICM Diode Maximum Forward Current Power Dissipation IFM d PD VRRM IF(AV) IFSM It VCES VGES IC ICM Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage PD VRRM TJ TSTG VISOL AC (1min.) 1 device Continuous...
