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GB15RF120K - IGBT PIM MODULE

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94571 GB15RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design VCES = 1200V IC = 15A, TC=80°C tsc > 10µs, TJ=150°C ECONO2 PIM VCE(on) typ. = 2.55V Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance • Low EMI, Requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Low Junction to Case Thermal Resistance • UL Listed  www.DataSheet4U.