GB25RF120K - IGBT PIM MODULE

International Rectifier (now Infineon)

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.

GB25RF120K igbt pim module by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	GB25RF120K
Manufacturer	International Rectifier (now Infineon)
File Size	781.49 KB
Description	IGBT PIM MODULE
Datasheet	GB25RF120K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94552 GB25RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design VCES = 1200V IC = 25A, TC=80°C tsc > 10µs, TJ=150°C ECONO2 PIM VCE(on) typ. = 2.