GB30RF60K Description
Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE.
GB30RF60K Key Features
- Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10μs Short Circuit Capability Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design
- TOTALLY LEAD-FREE
- Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to H