GB5B120KD Overview
PD - 94385E IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
GB5B120KD Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- TO-220 Package
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI