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GP30B60KD-E - IRGP30B60KD-E

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • TO-247AD Package Benefits.
  • Benchmark Efficiency for Motor Control. C G E n-channel.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. VCES = 600V IC.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR
GP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-247AD Package Benefits • Benchmark Efficiency for Motor Control. C G E n-channel • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 30A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.