GPS40B120UD - Insulated Gate Bipolar Transistor

Features

Non Punch Through IGBT Technology. www. DataSheet4U. com.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package. G E @ VGE = 15V, N-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required.

International Rectifier

Datasheet Details

Part number	GPS40B120UD
Manufacturer	International Rectifier
File Size	359.51 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	GPS40B120UD Datasheet
Additional preview pages of the GPS40B120UD datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V Features • Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. G E @ VGE = 15V, N-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.

Published: Aug 27, 2006 |