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HF20A060ACE - Hexfred Die

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Description

Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.7V Max.

600V Min.

10µA Max.

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    www.DataSheet4U.com Preliminary Data Sheet PD-20600 rev. C 2/04 HF20A060ACE Hexfred Die in Wafer Form 600 V Size 20 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 10µA Max. Test Conditions TJ = 25°C, IF = 12.0A TJ = 25°C, IR = 200µA TJ = 25°C, VR = 600V Mechanical Data Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.085" x 0.164" 150mm, with std. < 100 > flat .015" ± .003" 01-5160 100 Microns 0.
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