IB6N60A - IRFIB6N60A

Datasheet Summary

Features

gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25°C, L = 6.8mH RG = 25W, IAS = 9.2A. (See Figure 12).
ISD £ 9.2A, di/dt £ 50A/µs, VDD £ V(BR)DSS, TJ £ 150°C t=60s, f=60Hz WORLD.

International Rectifier

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Datasheet Details

Part number	IB6N60A
Manufacturer	International Rectifier
File Size	183.47 KB
Description	IRFIB6N60A
Datasheet	IB6N60A Datasheet
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www.DataSheet4U.com PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.

Published: Mar 18, 2009 |