IB6N60A Overview
l l Single Transistor Forward Active Clamped Forward Notes through are on page 8 .irf. IRFIB6N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Parameter Forward...
IB6N60A Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK G DS