IFR830A Overview
l l Two transistor Forward Half Bridge and Full Bridge Notes through are on page 8 .irf. IRF830A Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source...
IFR830A Key Features
- Uninterruptable Power Supply
- High speed power switching
- IRF830A HEXFET® Power MOSFET VDSS 500V Rds(on) max 1.40Ω ID 5.0A Benefits Low Gate Charge Qg results in Si
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified ( See AN 1001)
- TO-220AB GDS