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IG1NT052N10R - Radiation Hardened GaN transistor

Product Overview

International Rectifier

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IG1NT052N10R Radiation Hardened GaN transistor by International Rectifier - Datasheet Preview — Datasheet preview – IG1NT052N10R

Datasheet Details

Part number	IG1NT052N10R
Manufacturer	International Rectifier
File Size	670.36 KB
Description	Radiation Hardened GaN transistor
Datasheet	IG1NT052N10R Datasheet
Additional preview pages of the IG1NT052N10R datasheet.

Product details

Description

IG1NT052N10R is part of the IR HiRel family of products.

Features

Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV. cm2/mg (Au ion).
Ultra low RDS(on).
Low total gate charge.
Zero reverse recovery charge.
Hermetically sealed ceramic package.
Surface mount.
Light weight.
ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
VDS max: 100V.
ID: 52A.
RDS(on) max : 6.0m.
QG max: 13nC.
Size: 7.1mm x 5.3mm.
REF: MIL.

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Published: Oct 26, 2025 |