IG1NT052N10R Datasheet | International Rectifier

Features - Single event effect (SEE) hardened up to LET (GAN) 1 = 70 Me V.cm2/mg (Au ion) - Ultra low RDS(on) - Low total gate charge - Zero reverse recovery charge - Hermetically sealed ceramic package - Surface mount - Light weight - ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary - VDS max: 100V - ID: 52A - RDS(on) max : 6.0m - QG max: 13n C - Size: 7.1mm x 5.3mm - REF: MIL-PRF-19500 / 794 Potential Applications - Isolated DC-DC converters - Point-of-load (Po L) converters for FPGA, ASIC and DSP core rails - Synchronous rectification - Motor drives Pow IR-SMD Product Validation Validated based on MIL-PRF-19500 for space applications Description IG1NT052N10R is part of the IR Hi Rel family of products. IR Hi Rel radiation hardened Ga N transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). The bination of low RDS(on), low gate charge and zero reverse recovery charge reduces the power losses in switching applications such as DC-DC converters and motor control. These devices enable high-frequency operation of power management circuits resulting in high-power density and low payload mass. Ordering Information Table 1 Ordering options Part number Package Pow IR-SMD IG1NT052N10G Pow IR-SMD JANSG2N7697UFHC Pow IR-SMD Screening Level COTS COTS JANS TID Level 100 krad(Si) 500 krad(Si) 500 krad(Si) 1 LET Si equivalent = 86.5 Me V.cm2/mg Please read the Important Notice and Warnings at the end of this document .infineon./irhirel page 1 of...