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IPS042G - DUAL FULLY PROTECTED POWER MOSFET SWITCH

General Description

The IPS042G is a fully protected dual low side SMART POWER MOSFET that

Key Features

  • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E. S. D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.5µs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet No.PD 60153-J IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.5µs Description The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 2A.