IR01H224
Description
The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction.
Key Features
- Output Power MOSFETs in half-bridge configuration
- 500V rated breakdown voltage
- High side gate drive designed for bootstrap * * * *
- operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr
