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IR2103 - HALF-BRIDGE DRIVER

Datasheet Summary

Description

The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Floating channel designed for bootstrap operation.
  • Fully operational to +600V.
  • Tolerant to negative transient voltage.
  • dV/dt immune.
  • Gate drive supply range from 10 to 20V.
  • Undervoltage lockout.
  • 3.3V, 5V and 15V logic compatible.
  • Cross-conduction prevention logic.
  • Matched propagation delay for both channels.
  • Internal set deadtime.
  • High side output in phase with HIN input.
  • Low side output out of phase with LIN input IR2103(S)PBF Half-B.

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Full PDF Text Transcription

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Features  Floating channel designed for bootstrap operation  Fully operational to +600V  Tolerant to negative transient voltage  dV/dt immune  Gate drive supply range from 10 to 20V  Undervoltage lockout  3.3V, 5V and 15V logic compatible  Cross-conduction prevention logic  Matched propagation delay for both channels  Internal set deadtime  High side output in phase with HIN input  Low side output out of phase with LIN input IR2103(S)PBF Half-Bridge Driver Product Summary VOFFSET (max) IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V 130mA / 270mA 10V – 20V 680 & 150 ns 520 ns Description Package Options The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.
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