IR2108 Description
Programmable 0.54~5 µs The IR2108(4)(S) are high voltage, high speed Internal 540ns IN/SD yes power MOSFET and IGBT drivers with depenProgrammable 0.54~5 µs dent high and low side referenced output yes Internal 100ns HIN/LIN 2304 channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic.
IR2108 Key Features
- Gate drive supply range from 10 to 20V IR21084S IR2108S
- Undervoltage lockout for both channels
- 3.3V, 5V and 15V input logic patible 14-Lead PDIP
- Cross-conduction prevention logic IR21084 Matched propagation delay for both channels
- High side output in phase with HIN input 8-Lead PDIP
- Low side output out of phase with LIN input IR2108
- Logic and power ground +/- 5V offset
- Lower di/dt gate driver for better Dead-Time Ground Pins Part logic prevention noise immunity logic
- Available in Lead-Free 2106/2301
- Floating channel designed for bootstrap operation