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IR2108 - HALF-BRIDGE DRIVER

Datasheet Summary

Description

Programmable 0.54~5 µs The IR2108(4)(S) are high voltage, high speed Internal 540ns IN/SD yes power MOSFET and IGBT drivers with depenProgrammable 0.54~5 µs dent high and low side referenced output yes Internal 100ns HIN/LIN COM 2304 channels.

Features

  • Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC.
  • Gate drive supply range from 10 to 20V IR21084S IR2108S.
  • Undervoltage lockout for both channels.
  • 3.3V, 5V and 15V input logic compatible 14-Lead PDIP.
  • Cross-conduction prevention logic IR21084 Matched propagation delay for both channels.
  • High side output in phase with HIN input 8-Lead PDIP.
  • Low side output out of phase w.

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Full PDF Text Transcription

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www.DataSheet4U.com Data Sheet No. PD60161-R IR2108(4) (S) & (PbF) Features Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V IR21084S IR2108S • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible 14-Lead PDIP • Cross-conduction prevention logic IR21084 Matched propagation delay for both channels • • High side output in phase with HIN input 8-Lead PDIP • Low side output out of phase with LIN input IR2108 • Logic and power ground +/- 5V offset.
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