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IR2109SPBF - HALF-BRIDGE DRIVER

General Description

The IR2109(4)(S) are high voltage, high speed power 8 Lead SOIC MOSFET and IGBT drivers with dependent high and 14 Lead PDIP low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • HALF-BRIDGE DRIVER Product Summary.

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Full PDF Text Transcription for IR2109SPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IR2109SPBF. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet No. PD60163-U IR2109(4) (S) & (PbF) Features HALF-BRIDGE DRIVER Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600V max. 120 mA / 250 mA 10 - 20V 75...

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O+/VOUT ton/off (typ.) Dead Time 600V max. 120 mA / 250 mA 10 - 20V 750 & 200 ns 540 ns • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset.

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