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IR2213SPBF - High and Low Side Driver

Download the IR2213SPBF datasheet PDF. This datasheet also covers the IR2213 variant, as both devices belong to the same high and low side driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • Floating channel designed for bootstrap operation.
  • Fully operational to +1200 V.
  • Tolerant to negative transient voltage.
  • dV/dt immune.
  • Gate drive supply range from 12 V to 20 V.
  • Undervoltage lockout for both channels.
  • 3.3 V logic compatible.
  • Separate logic supply range from 3.3 V to 20 V.
  • Logic and power ground ±5 V offset.
  • CMOS Schmitt-triggered inputs with pull-down.
  • Cycle by cycle edge-triggered shutdown logic.
  • Matched propagation d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IR2213_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Floating channel designed for bootstrap operation  Fully operational to +1200 V  Tolerant to negative transient voltage  dV/dt immune  Gate drive supply range from 12 V to 20 V  Undervoltage lockout for both channels  3.3 V logic compatible  Separate logic supply range from 3.3 V to 20 V  Logic and power ground ±5 V offset  CMOS Schmitt-triggered inputs with pull-down  Cycle by cycle edge-triggered shutdown logic  Matched propagation delay for both channels  Outputs in phase with inputs IR2213(S)PBF High and Low Side Driver Product Summary VOFFSET (max) IO+/VOUT ton/off (typical) Delay Matching 1200 V 1.