IR25602SPBF Datasheet Text
IR25602SPBF
Features
Half-Bridge Driver
Product Summary
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout
- 3.3V, 5V and 15V input logic patible
- Cross-conduction prevention logic
- Internally set dead-time
- High side output in phase with input
- Shut down input turns off both channels
- Matched propagation delay for both channels
VOFFSET IO+/VOUT
Ton/off (typ.) Dead time (typ.)
600V max. 130 mA/ 270 mA
10
- 20V 680 & 150 ns
520 ns
Description
The IR25602 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 V.
Package Options
8 Lead SOIC
Ordering Information
Base Part Number
IR25602SPBF IR25602SPBF
Package Type SO8N SO8N...