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IR370SG08HCB - Phase Control Thyristors

Download the IR370SG08HCB datasheet PDF. This datasheet also covers the IR370SG06HCB variant, as both devices belong to the same phase control thyristors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IR370SG06HCB-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet I0212J 12/99 PHASE CONTROL THYRISTORS IR370SG..HCB Junction Size: Square 370 mils Wafer Size: 4" VRRM Class: Passivation Process: 600 to 1200 V Glassivated MESA Reference IR Packaged Part: 50RIA Series Major Ratings and Characteristics Parameters Units Test Conditions VTM Maximum On-state Voltage 1.2 V TJ= 25°C, IT = 25 A VDRM/VRRM Direct and Reverse Breakdown Voltage 600 to 1200 V TJ = 25°C, IDRM /IRRM = 100 µA (1) IGT Max. Required DC Gate Current to Trigger 150 mA TJ= 25° C, anode supply = 6 V, resistive load VGT Max. Required DC Gate Voltage to Trigger 2V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range 5 to 200 mA Anode supply = 6 V, resistive load IL Maximum Latching Current (1) Nitrogen flow on die edge.