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IR51H737 Datasheet Self-oscillating Half-bridge

Manufacturer: International Rectifier (now Infineon)

Overview: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.

General Description

The IR51H737 is a high voltage, high speed, selfoscillating half-bridge.

Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction.

The front-end

Key Features

  • n n n n n n Product Summary VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us Internal oscillator with programmable frequency 1 1. 4 × (RT + 75 Ω ) × CT Zener clamped Vcc for offline operation Half-bridge output is out of pha.

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More Datasheets from International Rectifier (now Infineon)

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