IRCZ24 Datasheet | International Rectifier

- 9.615A HEXFET® Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 55V RDS(on) = 0.040Ω ID = 26A Description Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a...