IRF1205 Overview
Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universely preferred...
IRF1205 Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175 °C Operating Temprature
- Fast Switching