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PROVISIONAL
l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universely preferred for all commercial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF1205 Datasheet
