Datasheet Details
| Part number | IRF1205 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 39.01 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF1205-InternationalRectifier.pdf |
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Overview: PROVISIONAL l Advanced Process Technology l Dynamic dv/dt Rating l 175 °C Operating Temprature l Fast Switching l Fully Avalanche Rated.
| Part number | IRF1205 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 39.01 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF1205-InternationalRectifier.pdf |
|
|
|
Fifth Generation MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universely preferred for all commercial applications at power dissipation levels to approximately 50 watts.
Compare IRF1205 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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