Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- N T S D O N O T IN C LU DE B U R R S . Part Marking Information
TO-220AB
EM XP AL ME P :L ETH : IS TH IS A IS N F IR EXA N AIR 1 0F1 1 00 1 0 W ITA H AE SM SB EL MY BLY W ITH SS LO TO D CE OD 9B1M LOT C 9E B 1M
A A
INR TE RT NIO A TIO NAL IN TE NA N AL RTIFIE E C TIF R EC R IE R 10 1 0 IR F IR 1 0F 10 LO G O LOG 9 2 49 62 4 6 9B 9B1 M 1 M AE SM SB EL MY BLY ASS LOT CE O DE L OT COD
PT AR NB UE MR BER PAR NTU M
D A TE CE ODE D A TE COD (Y Y(Y WY WW )W) YR EAR YY Y =Y Y= EA W W = EEK W W = W E.
IRF1310N Datasheet
