IRF1312
PD- 94504
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
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IRF1312 IRF1312S IRF1312L ID
95A
VDSS
80V
RDS(on) max
10mΩ
TO-220AB IRF1312
D2Pak IRF1312S
TO-262 IRF1312L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt
- Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
95 67 380 3.8 210 1.4 ± 20 5.1 -55 to + 175 300 (1.6mm from case ) 10 lbf- in (1.1N-...
