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IRF1324LPBF - Power MOSFET

Key Features

  • nche Current vs. Pulsewidth www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRF1324S/LPbF 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97353A IRF1324SPbF IRF1324LPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 1.3mΩ 1.