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IRF1324S-7PPBF - Power MOSFET

Key Features

  • cle = Single Pulse Avalanche Current (A) 100 0.05 0.10 10 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 150°C and Tstart =25°C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback April 08, 2014 Free Datasheet http://www.

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IRF1324S-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 24V 0.8mΩ 1.