IRF1405PBF Datasheet | International Rectifier

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V ™ Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage d Single Pulse Avalanche Energy Ù Avalanche Current i Repetitive Avalanche Energy e Peak Diode recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA .irf. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient - 94969B IRF1405Pb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 5.3mΩ ID = 169A† DS G TO-220AB Max. 169h 118h 680 330 2.2 ± 20 560 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. - - - 0.50 - - -...